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TK25A60X

Toshiba
Part Number TK25A60X
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 9, 2019
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25A60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low dra...
Datasheet PDF File TK25A60X PDF File

TK25A60X
TK25A60X

Overview
MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25A60X 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
105 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 1.
2 mA) 3.
Packaging and Internal Circuit TK25A60X 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (t = 1.
0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 25 100 45 348 6.
2 25 100 150 -55 to 150 2000 0.
6 V A W mJ A  V Nm Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2014-06 1 2014-05-12 Rev.
2.
0 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 15.
8 mH, RG = 25 Ω, IAR = 6.
2 A TK25A60X Symbol Rth(ch-c) Rth(ch-a) Max U...


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