TK32E12N1

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK32E12N1，ITK32E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ...