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TK32E12N1

Toshiba
Part Number TK32E12N1
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 11, 2013
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK32E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low dr...
Datasheet PDF File TK32E12N1 PDF File

TK32E12N1
TK32E12N1

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK32E12N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 11.
0 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit TK32E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperatu...


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