isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FQP20N06L
DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 55mΩ(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current , high speed switching ·Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS VGS ID IDM PD
Drain-Source Voltage Gate-Source Voltage Drain Current-continuous@ TC=25℃ Pulse Drain Current Power Dissipation @TC=25℃
Tj
Max.
Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
60
V
±20
V
21
A
84
A
60
...