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FQP20N06L

Part Number	FQP20N06L
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 5, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Sour...
Datasheet	FQP20N06L PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID IDM PD Drain-Source Voltage Gate-Source Voltage Drain Current-continuous@ TC=25℃ Pulse Drain Current Power Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V ±20 V 21 A 84 A 60 ...

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