isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPP60R360P7，IIPP60R360P7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
36Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent
ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
9
IDM
Drain Current-Single Pulsed
26
PD
Total Dissipation @TC=25℃
60
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UN...