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IPP60R360P7

INCHANGE
Part Number IPP60R360P7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP60R360P7，IIPP60R360P7 ·FEATURES ·Static drain-source on-resi...
Datasheet PDF File IPP60R360P7 PDF File

IPP60R360P7
IPP60R360P7

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP60R360P7，IIPP60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
36Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 60 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UN...


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