Part Number
|
NVD4C05N |
Manufacturer
|
ON Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Oct 7, 2020 |
Detailed Description
|
NVD4C05N
MOSFET – Power, Single, N-Channel
30 V, 4.1 mW, 90 A
Features
• Low RDS(on) to Minimize Conduction Losses • L...
|
Datasheet
|
NVD4C05N
|
Overview
NVD4C05N
MOSFET – Power, Single, N-Channel
30 V, 4.
1 mW, 90 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1 & 3)
TC = 25°C
ID
Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
PD
(Note 1)
TC = 100°C
90
A
64
57
W
28
Continuous Drain Current RqJA (Notes 1, 2 & 3)
TA = 25°C
ID
Steady TA = 100°C
Power Dissipa...
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