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NVD4C05NT4G

Part Number	NVD4C05NT4G
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 7, 2020
Detailed Description	Isc N-Channel MOSFET Transistor NVD4C05NT4G ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charg...
Datasheet	NVD4C05NT4G PDF File

Overview

Isc N-Channel MOSFET Transistor NVD4C05NT4G ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 395 PD Total Dissipation @TC=25℃ 57 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-cas...

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NVD4C05NT4G N-Channel MOSFET - INCHANGE

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