isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS · These devices are well suited for high efficient switched
mode power supplies and active power factor correction.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS VGS ID PD
Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃
Tj
Max.
Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
500
V
±30
V
20
A
280
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PA...