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FDP20N50


Part Number FDP20N50
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resis...
Features
• RDS(on) = 200 mW (Typ.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 45.6 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC−DC Power Supply DATA SHEET www.onsemi.com VDSS 500 V RDS(on) MAX 230 mW @ 10 V ID MAX 20...

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FDP20N50 : UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Ga.

FDP20N50 : ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · These devices are well suited for high efficient switched mode power supplies and active power factor correction. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V ±30 V 20 A 280 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance.

FDP20N50F : UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitab.

FDP20N50F : UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 100 ns and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFET's have over 200 ns and 4.5 V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power.




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