isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·DC to DC converters ·synchronous rectification for telecommunication PSU ·AC motor drives and uninterruptible power supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
96
IDM
Drain Current-Single Pulsed
384
PD
Total Dissipation @TC=25℃
188
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNI...