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FDP085N10A


Part Number FDP085N10A
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while m...
Features
• RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant Description This N-Channel MOSFET is produced using ON Semicond...

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FDP085N10A : N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part FDP085N10A V(BR)DSS 100V IDn 96A RDS(on) Max 8.5mΩ1 Die Size 2.4 x 4.4 mm2 See page 2 for ordering part numbers & supply formats FDP085N10A Applications Features • High density AC / DC Converters • Motor drives & Micro Inverters • High Power & Current Handling Capability • Low RDS (on) per mm2 Maximum Ratings • Low Gate Charge, Fast Switching Symbol VDSS VGSS ID IDM TJ, TSTG EAS dv/dt Parameter Drain to Source Voltage Drain Current2 Gate to Source Voltage Continuous (TC = 25°C) Drain Current3 Continuous (TC = 100°C) Pulsed Operation Junction & Storage Temperature Single Pulsed Avalanche Energy4 Peak Diode Recover.

FDP085N10A : This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv.

FDP085N10A : isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC to DC converters ·synchronous rectification for telecommunication PSU ·AC motor drives and uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 96 IDM Drain Current-Single Pulsed 384 PD Total Dissipation @TC=25℃ 188 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNI.




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