IPD60R280CFD7

isc N-Channel MOSFET Transistor IPD60R280CFD7，IIPD60R280CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB...