DatasheetsPDF.com

IPD60R280CFD7

INCHANGE
Part Number IPD60R280CFD7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD60R280CFD7,IIPD60R280CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28...
Datasheet PDF File IPD60R280CFD7 PDF File

IPD60R280CFD7
IPD60R280CFD7


Overview
isc N-Channel MOSFET Transistor IPD60R280CFD7,IIPD60R280CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 31 PD Total Dissipation @TC=25℃ 51 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.
43 62 UNIT ℃/W ℃/W isc website:www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPD60R280CFD7,IIPD60R280CFD7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.
18mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=3.
6A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=3.
6A, VGS = 0V MIN TYP MAX UNIT 600 V 3.
5 4.
5 V 0.
28 Ω 0.
1 μA 1 μA 1.
0 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these s...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)