isc N-Channel MOSFET
Transistor
IPP200N15N3,IIPP200N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Ideal for high frequency switching and sync.
Rec.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation @TC=25℃
150
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
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