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IPP200N15N3

INCHANGE
Part Number IPP200N15N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·...
Datasheet PDF File IPP200N15N3 PDF File

IPP200N15N3
IPP200N15N3

Overview
isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync.
Rec.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 150 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL ...


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