IRF60R217

isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous rectifier applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS D...