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IRF60R217

Infineon
Part Number IRF60R217
Manufacturer Infineon
Description IR MOSFET
Published Apr 12, 2016
Detailed Description IR MOSFET StrongIRFET™ IRF60R217 Application  Brushed Motor drive applications  BLDC Motor drive applications Bat...
Datasheet PDF File IRF60R217 PDF File

IRF60R217
IRF60R217

Overview
IR MOSFET StrongIRFET™ IRF60R217 Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate VDSS RDS(on) typ.
max ID 60V 8.
0m 9.
9m 58A D Drain D S G D-Pak IRF60R217 S Source Base part number Package Type IRF60R217 D-Pak Standard Pack Form Quantity Tape and Reel 2000 Orderable Part Number IRF60R217 RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 30 ID = 35A 25 20 15 TJ = 125°C 10 5 TJ = 25°C 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1.
Typical On-Resistance vs.
Gate Voltage 1 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2.
Maximum Drain Current vs.
Case Temperature 2016-01-05   IRF60R217 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance   Symbol Parameter RJC Junction-to-Case  RJA Junction-to-Ambient (PCB Mount)  RJA Junction-to-Ambient  Max.
58 41 217 83 0.
56 ± 20 -55 to + 175   300 85 124 See Fig 15, 16, 23a, 23b Typ.
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