isc P-Channel MOSFET
Transistor
IRF9530N,IIRF9530N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.
2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-14
IDM
Drain Current-Single Pulsed
-56
PD
Total Dissipation @TC=25℃
79
Tj
Max.
Operating Junction Temp...