isc N-Channel MOSFET
Transistor
IRFP4410Z,IIRFP4410Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.
0mΩ ·Enhancement mode:
Vth =2.
0 to 4.
0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
97
IDM
Drain Current-Single Pulsed
390
PD
Total Dissipation @TC=25℃
230
Tj
Max.
Operating Ju...