isc N-Channel MOSFET
Transistor
IRL3803V，IIRL3803V
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±16
ID
Drain Current-Continuous
140
IDM
Drain Current-Single Pulsed
470
PD
Total Dissipation @TC=25℃
200
Tj
Max.
O...