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IRL3803V

INCHANGE
Part Number IRL3803V
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhan...
Datasheet PDF File IRL3803V PDF File

IRL3803V
IRL3803V

Overview
isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 140 IDM Drain Current-Single Pulsed 470 PD Total Dissipation @TC=25℃ 200 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
74 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscse...


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