isc N-Channel MOSFET
Transistor
SPA11N60C3E8185，SPA11N60C3E8185
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11
IDM
Drain Current-Single Pulsed
33
PD
Total Dissipation @TC=25℃
125
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃...