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SPA11N60C3E8185

Infineon Technologies
Part Number SPA11N60C3E8185
Manufacturer Infineon Technologies
Description Power Transistor
Published Dec 4, 2015
Detailed Description SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage...
Datasheet PDF File SPA11N60C3E8185 PDF File

SPA11N60C3E8185
SPA11N60C3E8185

Overview
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.
38 Ω 11 A PG-TO220 Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 Q67042-S4403 11N60C3 SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.
5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1H...


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