isc N-Channel MOSFET
Transistor
SPD07N20G,ISPD07N20G
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.
4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
7
IDM
Drain Current-Single Pulsed
28
PD
Total Dissipation @TC=25℃
40
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rt...