DatasheetsPDF.com

SPD07N20G

Infineon
Part Number SPD07N20G
Manufacturer Infineon
Description Power Transistor
Published Oct 14, 2020
Detailed Description SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltag...
Datasheet PDF File SPD07N20G PDF File

SPD07N20G
SPD07N20G

Overview
SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt rated SPD 07N20 G VDS 200 V RDS(on) 0.
4 Ω ID 7A 1 23 2 1 3 Type SPD07N20 G SPU07N20 G Package PG-TO252 PG-TO251 Pb-free Yes Yes Packaging Tape and Reel Tube Pin 1 Pin 2 Pin 3 G D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω IDpulse EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = 7 A, VDS = 160 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg Value 7 4.
5 28 120 4 6 ±20 40 -55.
.
.
+175 55/150/56 Unit A mJ kV/µs V W ˚C Rev.
2.
5 Page 1 20...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)