isc N-Channel MOSFET
Transistor
SPD07N60C3,ISPD07N60C3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.
6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High peak current capability ·Improved transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
7.
3
IDM
Drain Current-Single Pulsed
21.
9
PD
Total Dissipation @TC=25℃
83
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j...