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SPD07N60C2

Infineon Technologies
Part Number SPD07N60C2
Manufacturer Infineon Technologies
Description Power Transistor
Published Nov 21, 2008
Detailed Description Final data SPD07N60C2 SPU07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worl...
Datasheet PDF File SPD07N60C2 PDF File

SPD07N60C2
SPD07N60C2

Overview
Final data SPD07N60C2 SPU07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO-251 and TO-252 • Ultra low gate charge www.
DataSheet4U.
com Product Summary VDS RDS(on) ID P-TO251 600 0.
6 7.
3 P-TO252 V Ω A • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Type SPD07N60C2 SPU07N60C2 Package P-TO252 P-TO251 Ordering Code Q67040-S4312 Q67040-S4311 Marking 07N60C2 07N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 7.
3 4.
6 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.
5A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 14.
6 230 0.
5 7.
3 6 ±20 83 -55.
.
.
+150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =7.
3A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =7.
3A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case www.
DataSheet4U.
com SPD07N60C2 SPU07N60C2 Symbol min.
RthJC RthJA RthJA Tsold - Values typ.
max.
1.
5 75 75 50 0.
66 260 Unit K/W Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.
6 mm (0.
063 in.
) from case for 10s W/K °C Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.
25mA V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.
5 700 4.
5 5.
5 V Drain-source avalanche breakdown voltage VGS =0V, ID =7.
3A Gate threshold voltage, VGS = VDS ID =350µA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C µ...


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