isc P-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
Tj
Max.
Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
IRF5305L
VALUE -55 ±20 -22 110
-55~175 -55~175
UNIT V V A W ℃ ℃
MAX ...