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IRF5305

INCHANGE
Part Number IRF5305
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancem...
Datasheet PDF File IRF5305 PDF File

IRF5305
IRF5305


Overview
isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -31 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 110 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
4 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -16A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS= -55V; VGS= 0V VSD Diode forward voltage Is= -16A; VGS = 0V IRF5305,IIRF5305 MIN TYP MAX UNIT -55 V -2.
0 -4.
0 V 0.
06 Ω ±100 nA -25 μA -1.
3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous envir...


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