isc P-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤90mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·High side switching ·Push pull amplifiers ·Current
regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±15
V
ID
Drain Current-Continuous
-26
A
IDM
Drain Current-Single Pulsed
-80
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Chann...