DatasheetsPDF.com

IXTA26P10T

IXYS
Part Number IXTA26P10T
Manufacturer IXYS
Description Power MOSFET
Published Oct 13, 2020
Detailed Description TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VG...
Datasheet PDF File IXTA26P10T PDF File

IXTA26P10T
IXTA26P10T

Overview
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings - 100 V - 100 V 15 V 25 V - 26 A - 80 A - 26 A 300 mJ 150 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 0.
35 g 2.
50 g 3.
00 g Symbol Test Conditions (T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)