isc P-Channel MOSFET
Transistor
IXTA28P065T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Hight side switching ·Current
regulators ·Automatic test equipment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-65
V
VGS
Gate-Source Voltage
±15
V
ID
Drain Current-Continuous
-28
A
IDM
Drain Current-Single Pulsed
-90
A
PD
Total Dissipation @TC=25℃
83
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-...