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IXTA28P065T

INCHANGE
Part Number IXTA28P065T
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Nov 4, 2020
Detailed Description isc P-Channel MOSFET Transistor IXTA28P065T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·100% avalanche...
Datasheet PDF File IXTA28P065T PDF File

IXTA28P065T
IXTA28P065T

Overview
isc P-Channel MOSFET Transistor IXTA28P065T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -65 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -28 A IDM Drain Current-Single Pulsed -90 A PD Total Dissipation @TC=25℃ 83 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-...


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