isc N-Channel MOSFET
Transistor
IXTP12N50PM
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 500mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
6
IDM
Drain Current-Single Pulsed
30
PD
Total Dissipation @TC=25℃
50
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THER...