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IXTP12N50PM

INCHANGE
Part Number IXTP12N50PM
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP12N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on...
Datasheet PDF File IXTP12N50PM PDF File

IXTP12N50PM
IXTP12N50PM

Overview
isc N-Channel MOSFET Transistor IXTP12N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 500mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 50 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THER...


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