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IXTP48N20T


Part Number IXTP48N20T
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor IXTP48N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche v...
Features
·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Speed Power Switching Applications
·ABSOLUTE...

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Datasheet IXTP48N20T PDF File








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IXTP48N20T : TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) TO-263 TO-220 TO-3P Maximum Ratings 200 200 V V ± 30 V 48 A 130 A 5A 500 mJ 3 250 -55 ... +175 175 -55 ... +175 300 260 10..65/2.2..14.6 1.13/10 2.5 3.0 5.5 V/ns W °C °C °C °C °C Nm.




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