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IXTP48N20T

IXYS
Part Number IXTP48N20T
Manufacturer IXYS
Description Power MOSFET
Published Jun 27, 2016
Detailed Description TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N...
Datasheet PDF File IXTP48N20T PDF File

IXTP48N20T
IXTP48N20T

Overview
TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 seconds Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) TO-263 TO-220 TO-3P Maximum Ratings 200 200 V V ± 30 V 48 A 130 A 5A 500 mJ 3 250 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 10.
.
65/2.
2.
.
14.
6 1.
13/10 2.
5 3.
0 5.
5 V/ns W °C °C °C °C °C Nm/lb.
in Nm/lb.
in g g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
20...


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