| Part Number | IXTP50N20P |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor IXTP50N20P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 60mΩ ·Fully characterized avalanche voltage a... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 60mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectific... |
| File Size | 246.22KB |
| Datasheet |
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IXTP50N20P : PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA50N20P IXTP50N20P IXTQ50N20P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-3P,TO-220) TO-263 TO-220 TO-3P Maximum Ratings 200 V 200 V ±20 V ±30 V 50 A 120 A 50 A 1 J 10 V/ns 360 W - 55 ... +175 175 - 55 ... +175 300 260 1.13/10 2.5 3.0 5.5 °C °C °C °C °C Nm/lb.in. g g g VDSS = ID25 = ≤ RDS(o.
IXTP50N20PM : isc N-Channel MOSFET Transistor IXTP50N20PM ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 90 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THE.
IXTP50N20PM : PolarTM Power MOSFET (Electrically Isolated Tab) IXTP50N20PM VDSS = ID25 = RDS(on) 200V 50A 60m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 200 V 200 V 20 V 30 V 50 A 120 A 50 A 1 J 10 V/ns 90 W -55 ... +175 C 175 C -55 ... +175 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3 .