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IXTP50N20PM

INCHANGE
Part Number IXTP50N20PM
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 19, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP50N20PM ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static drain-source on...
Datasheet PDF File IXTP50N20PM PDF File

IXTP50N20PM
IXTP50N20PM

Overview
isc N-Channel MOSFET Transistor IXTP50N20PM ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 90 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THE...


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