isc N-Channel MOSFET
Transistor
STD12NM50ND
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 380mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS VGS ID IDM PD TJ Tstg
Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max.
Operating Junction Temperature Storage Temperature
VALUE UNIT
500
V
±25
V
11
A
44
A
100
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
...