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STD12NM50N


Part Number STD12NM50N
Manufacturer STMicroelectronics
Title N-channel Power MOSFET
Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical str...
Features Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N


■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) 0.38Ω 0.38Ω 0.38Ω 0.38Ω ID 11A 11A 11A (1) 11A 3 1 1 3 2 3 1 DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel D²PAK 3 1 2 TO-220FP Descript...

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STD12NM50ND : isc N-Channel MOSFET Transistor STD12NM50ND FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE UNIT 500 V ±25 V 11 A 44 A 100 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL .

STD12NM50ND : FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. 3 1 D2PAK 3 1 DPAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes Marking STB12NM50ND STD12NM50ND STF12NM50ND 12NM50ND 12NM50ND 12NM50ND 3 !-V Package D2PAK DPAK TO-220FP Packaging Tape and reel Tape and reel Tube June 2009 Doc ID 14936 Rev 2 1/16 www.st.com 16 Contents Contents STB12NM50ND, STD12NM50ND, STF12NM50ND 1 Electrical ratings . . . . . . . . . . . . . . . ..




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