Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STD80N10F7
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·FEATURES ·Extremely low gate charge ·Ultra low on-resistance ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous@TC=25℃ TC=100℃
70 48
A
IDM
Drain Current-Single Pulsed
280
A
PD
Total Dissipation
85
W
Tj
Max.
Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAM...