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STD80N10F7

INCHANGE
Part Number STD80N10F7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 5, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD80N10F7 \ ·FEATURES ·Extremely low gate charge ·Ultra low on...
Datasheet PDF File STD80N10F7 PDF File

STD80N10F7
STD80N10F7

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD80N10F7 \ ·FEATURES ·Extremely low gate charge ·Ultra low on-resistance ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 70 48 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation 85 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
76 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD80N10F7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...


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