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IRFR214

N-Channel MOSFET

Description

iscN-Channel MOSFET Transistor IRFR214 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL...

INCHANGE

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