DatasheetsPDF.com

IRFR214

INCHANGE
Part Number IRFR214
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 15, 2020
Detailed Description iscN-Channel MOSFET Transistor IRFR214 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement ...
Datasheet PDF File IRFR214 PDF File

IRFR214
IRFR214

Overview
iscN-Channel MOSFET Transistor IRFR214 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤2.
0Ω @VGS=10V ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 2.
2 A IDM Drain Current-Single Pulsed 8.
8 A PD Total Dissipation @TC=25℃ 25 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 5.
0 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFR214 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)