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Part Number
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DP8205C |
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Manufacturer
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Developer Microelectronics |
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Description
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N-Channel MOSFET |
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Published
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Dec 17, 2020 |
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Detailed Description
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DP8205C
www.depuw.com General Description
Dual N-Channel Enhancement Power MOSFET
Product Summary
Rev1.0
DP8205 use...
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Datasheet
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DP8205C
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Overview
DP8205C
www.
depuw.
com General Description
Dual N-Channel Enhancement Power MOSFET
Product Summary
Rev1.
0
DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
VDS ID (at VGS=4.
5V) RDS(ON) (at VGS = 4.
5V) RDS(ON) (at VGS = 2.
5V)
16 V 5.
0A 29mΩ 34mΩ
SOT23-6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta
Maximum Power Dissipationa Operating Junction and Storage Temperature Rang...
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