General Description DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.
5V) 30 V 13A 10.
5mΩ 12mΩ * RoHS and Halogen-Free Complaint SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Avalanche energy, single pulse (L=0.
5mH, Rg=25Ω) Maximum Power Dissipationa Operatin...

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