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DP170N03

Part Number	DP170N03
Manufacturer	Developer Microelectronics
Description	N-Channel MOSFET
Published	Dec 17, 2020
Detailed Description	General Description DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench t...
Datasheet	DP170N03 PDF File

Overview

General Description DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.
5V) 30 V 13A < 10.
5mΩ < 12mΩ * RoHS and Halogen-Free Complaint SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Avalanche energy, single pulse (L=0.
5mH, Rg=25Ω) Maximum Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS ID IDM IS EAS PD TJ,TSTG 30 ±20 13 100 4.
0 54 3.
1 -55 To 150 Thermal Characteristic Parameter Thermal Resistance,Junction-to-Ambient a Symbol RθJA Limit 60 Unit V V A A A mJ W ℃ Unit ℃/W 2020/10/20 DP170N03_REV1.
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Similar Datasheet

DP170N03 N-Channel MOSFET - Developer Microelectronics

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